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Swiss electronics
startup Minysa has secured €163,000 (CHF150,000) from Venture Kick to
accelerate the development of its next-generation gallium nitride (GaN) control
chips for high-performance power electronic systems.
Founded by Salem Abid, Minysa develops GaN gate-driver integrated circuits that help
manufacturers control GaN power devices more safely, efficiently, and
compactly. The technology aims to reduce integration complexity while enabling
smaller, cooler, and more reliable power systems for applications including
satellite power conversion, motor drives, actuators, robotics, and industrial
electronics.
GaN-based power
devices offer significant advantages over traditional silicon technologies,
including higher power density, improved energy efficiency, and reduced heat
generation. However, wider adoption has been constrained by complex control
requirements, reliability challenges, and demanding qualification processes.
The company’s
technology aims to address these barriers and support the deployment of GaN
devices in high-reliability environments.
The company is
initially targeting the European space power electronics market, where
efficiency, reliability, and technological sovereignty are increasingly
important. Minysa has already built a customer pipeline in the space and
high-reliability electronics sectors, including four space industry customers
and two European Space Agency-funded programmes focused on power-management
chips for power conversion systems and compact motor drives.
The funding will
support the development of Minysa’s first GaN gate-driver ASICs for space and
other high-reliability applications.